WEKO3
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埋め込みチャネルMOSキャパシタのC-V特性
https://fukuyama-u.repo.nii.ac.jp/records/8079
https://fukuyama-u.repo.nii.ac.jp/records/80795e231b58-1be4-45f5-9784-6654e667bd51
名前 / ファイル | ライセンス | アクション |
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KJ00005781460.pdf (557.0 kB)
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Item type | 紀要論文(ELS) / Departmental Bulletin Paper(1) | |||||
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公開日 | 2001-12-01 | |||||
タイトル | ||||||
タイトル | 埋め込みチャネルMOSキャパシタのC-V特性 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | C-V Characteristics of a Buried-Channel MOS Capacitor | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | C-V特性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 埋め込みチャネルMOSキャパシタ | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ポアソン方程式 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | C-V characteritics | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | buried-channel MOS capacitor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Poisson equabion | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ページ属性 | ||||||
内容記述タイプ | Other | |||||
内容記述 | P(論文) | |||||
著者名(日) |
三宅, 雅保
× 三宅, 雅保 |
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著者名よみ | ||||||
識別子Scheme | WEKO | |||||
識別子 | 43306 | |||||
姓名 | ミヤケ, マサヤス | |||||
著者名(英) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 43307 | |||||
姓名 | MIYAKE, Masayasu | |||||
言語 | en | |||||
著者所属(日) | ||||||
値 | 福山大学工学部電子・電気工学科 | |||||
著者所属(英) | ||||||
言語 | en | |||||
値 | Faculty of Engineering, Fukuyama University | |||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | High-frequency capacitance-voltage (C-V) characteristics of a buried-channel MOS capacitor have been measured and analyzed. The C-V characteristics, including transient behavior, of a buried-channel MOS capacitor that has a counter-doped p layer at the surface of n substrate are very similar to those of a surface-channel MOS capacitor of n substrate if the counter-doped layer is shallow enough to be fully inverted at large positive bias. As gate voltage is decreased, equilibrium capacitance for inversion (accumulation for the counter-doped layer) reaches a minimum value and then slightly increases to saturate, which is peculiar to a buried-channel MOS capacitor. This behavior arises from the fact that hole distribution is changed by the high-frequency gate-voltage change for the measurement signal although total amount of holes is not changed. | |||||
雑誌書誌ID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00217655 | |||||
書誌情報 |
福山大学工学部紀要 巻 25, p. 1-6, 発行日 2001-12 |