{"created":"2023-06-19T09:51:04.511856+00:00","id":8079,"links":{},"metadata":{"_buckets":{"deposit":"8fa7fcba-a1fb-4f65-b244-619896013e13"},"_deposit":{"created_by":3,"id":"8079","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"8079"},"status":"published"},"_oai":{"id":"oai:fukuyama-u.repo.nii.ac.jp:00008079","sets":["502:505:675:709"]},"author_link":["43307","43306","43305"],"item_1_biblio_info_14":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2001-12","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"6","bibliographicPageStart":"1","bibliographicVolumeNumber":"25","bibliographic_titles":[{"bibliographic_title":"福山大学工学部紀要"}]}]},"item_1_creator_6":{"attribute_name":"著者名(日)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"三宅, 雅保"}],"nameIdentifiers":[{"nameIdentifier":"43305","nameIdentifierScheme":"WEKO"}]}]},"item_1_description_1":{"attribute_name":"ページ属性","attribute_value_mlt":[{"subitem_description":"P(論文)","subitem_description_type":"Other"}]},"item_1_description_12":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"High-frequency capacitance-voltage (C-V) characteristics of a buried-channel MOS capacitor have been measured and analyzed. The C-V characteristics, including transient behavior, of a buried-channel MOS capacitor that has a counter-doped p layer at the surface of n substrate are very similar to those of a surface-channel MOS capacitor of n substrate if the counter-doped layer is shallow enough to be fully inverted at large positive bias. As gate voltage is decreased, equilibrium capacitance for inversion (accumulation for the counter-doped layer) reaches a minimum value and then slightly increases to saturate, which is peculiar to a buried-channel MOS capacitor. This behavior arises from the fact that hole distribution is changed by the high-frequency gate-voltage change for the measurement signal although total amount of holes is not changed.","subitem_description_type":"Other"}]},"item_1_full_name_7":{"attribute_name":"著者名よみ","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"43306","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ミヤケ, マサヤス"}]}]},"item_1_full_name_8":{"attribute_name":"著者名(英)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"43307","nameIdentifierScheme":"WEKO"}],"names":[{"name":"MIYAKE, Masayasu","nameLang":"en"}]}]},"item_1_source_id_13":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00217655","subitem_source_identifier_type":"NCID"}]},"item_1_text_10":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Faculty of Engineering, Fukuyama University"}]},"item_1_text_9":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"福山大学工学部電子・電気工学科"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2001-12-01"}],"displaytype":"detail","filename":"KJ00005781460.pdf","filesize":[{"value":"557.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://fukuyama-u.repo.nii.ac.jp/record/8079/files/KJ00005781460.pdf"},"version_id":"b18c49b1-bbc7-4659-a9ce-1c774d93d683"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"C-V特性","subitem_subject_scheme":"Other"},{"subitem_subject":"埋め込みチャネルMOSキャパシタ","subitem_subject_scheme":"Other"},{"subitem_subject":"ポアソン方程式","subitem_subject_scheme":"Other"},{"subitem_subject":"C-V characteritics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"buried-channel MOS capacitor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Poisson equabion","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"埋め込みチャネルMOSキャパシタのC-V特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"埋め込みチャネルMOSキャパシタのC-V特性"},{"subitem_title":"C-V Characteristics of a Buried-Channel MOS Capacitor","subitem_title_language":"en"}]},"item_type_id":"1","owner":"3","path":["709"],"pubdate":{"attribute_name":"公開日","attribute_value":"2001-12-01"},"publish_date":"2001-12-01","publish_status":"0","recid":"8079","relation_version_is_last":true,"title":["埋め込みチャネルMOSキャパシタのC-V特性"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-06-19T10:30:12.726828+00:00"}