WEKO3
インデックスリンク
アイテム
Optically Controlled n-InP Distributed Phase Shifter
https://fukuyama-u.repo.nii.ac.jp/records/7816
https://fukuyama-u.repo.nii.ac.jp/records/7816e0edc9ec-a517-4a74-a3c0-8f8be36e24c6
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00005781189.pdf (531.8 kB)
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| Item type | 紀要論文(ELS) / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 1991-01-01 | |||||
| タイトル | ||||||
| タイトル | Optically Controlled n-InP Distributed Phase Shifter | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| ページ属性 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | P(論文) | |||||
| 論文名よみ | ||||||
| その他のタイトル | Optically Controlled n-InP Distributed Phase Shifter | |||||
| 著者名(日) |
相島, 亜洲雄
× 相島, 亜洲雄 |
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| 著者名よみ | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 42093 | |||||
| 姓名 | アイシマ, アスオ | |||||
| 著者名(英) | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 42094 | |||||
| 姓名 | AISHIMA, Asuo | |||||
| 言語 | en | |||||
| 著者所属(英) | ||||||
| 言語 | en | |||||
| 値 | Department of Electronics and Electrical Engineering, Fukuyama University | |||||
| 抄録(英) | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The space charge modes in an n-InP diode with a suitably designed Schottky barrier cathode under illumination have been investigated numerically. It has been found that the cathode trapped domain mode changes into a travelling dipole domain mode with increasing illumination. An optically controlled phase shifter can be achieved by inserting an n-InP diode with a Schottky barrier cathode between a resonant microstrip lines in place of a conventional dielectric material. Phase shifts have been predicted as high as 2π radians/cm with the plasma density less than 10^<15>/cm^3. The device has a gain as a result of the electron transfer from the lower valley with light mass to the upper valleys with heavy mass. Ultra-fast and high-repetition rate phase modulation is possible, since the life time of the excess carriers in an n-InP diode is less than 100 ps. | |||||
| 雑誌書誌ID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AN00217655 | |||||
| 書誌情報 |
福山大学工学部紀要 巻 13, p. 59-68, 発行日 1991 |
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