WEKO3
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埋め浴みチャネルMOSキャパシタの高周波C-V特性
https://fukuyama-u.repo.nii.ac.jp/records/8129
https://fukuyama-u.repo.nii.ac.jp/records/81299be3971a-eebd-4692-89c5-3f324e4319bf
名前 / ファイル | ライセンス | アクション |
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KJ00005781525.pdf (773.7 kB)
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Item type | 紀要論文(ELS) / Departmental Bulletin Paper(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2003-12-01 | |||||
タイトル | ||||||
タイトル | 埋め浴みチャネルMOSキャパシタの高周波C-V特性 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | High-Frequency C-V Characteristics of a Buried-Channel MOS Capacitor | |||||
言語 | ||||||
言語 | jpn | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 埋め込みチャネルMOSキャパシタ | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | C-V特性 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | ポアソン方程式 | |||||
キーワード | ||||||
主題Scheme | Other | |||||
主題 | 正孔再分布 | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | buried-channel MOS capacitor | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | C-V characteristics | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | Poisson equation | |||||
キーワード | ||||||
言語 | en | |||||
主題Scheme | Other | |||||
主題 | hole redistribution | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ページ属性 | ||||||
内容記述タイプ | Other | |||||
内容記述 | P(論文) | |||||
著者名(日) |
三宅, 雅保
× 三宅, 雅保 |
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著者名よみ | ||||||
識別子Scheme | WEKO | |||||
識別子 | 43586 | |||||
姓名 | ミヤケ, マサヤス | |||||
著者名(英) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 43587 | |||||
姓名 | MIYAKE, Masayasu | |||||
言語 | en | |||||
著者所属(日) | ||||||
値 | 福山大学工学部電子・電気工学科 | |||||
著者所属(英) | ||||||
言語 | en | |||||
値 | Department of Electronic and Electrical Engineering, Faculty of Engineering, Fukuyama University | |||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | High-frequency capacitance-voltage (C-V) characteristics of a buried-channel, MOS capacitor have been analyzed. High-frequency capacitance of a buried-channel MOS capacitor that has a player at the surface of n substrate reaches a minimum value and then slightly increases to saturate in the inversion region. Poisson equation is solved numerically including hole redistribution effect by the gate-voltage change for the measurement signal. The result quantitatively explains the existence of capacitance minimum which is peculiar to a buried-channel MOS capacitor. | |||||
雑誌書誌ID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00217655 | |||||
書誌情報 |
福山大学工学部紀要 巻 27, p. 21-28, 発行日 2003-12 |