{"created":"2023-06-19T09:51:06.624200+00:00","id":8129,"links":{},"metadata":{"_buckets":{"deposit":"79b4a4da-7dc6-4cae-befa-f09315903784"},"_deposit":{"created_by":3,"id":"8129","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"8129"},"status":"published"},"_oai":{"id":"oai:fukuyama-u.repo.nii.ac.jp:00008129","sets":["502:505:675:711"]},"author_link":["43586","43587","43585"],"item_1_biblio_info_14":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-12","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"28","bibliographicPageStart":"21","bibliographicVolumeNumber":"27","bibliographic_titles":[{"bibliographic_title":"福山大学工学部紀要"}]}]},"item_1_creator_6":{"attribute_name":"著者名(日)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"三宅, 雅保"}],"nameIdentifiers":[{"nameIdentifier":"43585","nameIdentifierScheme":"WEKO"}]}]},"item_1_description_1":{"attribute_name":"ページ属性","attribute_value_mlt":[{"subitem_description":"P(論文)","subitem_description_type":"Other"}]},"item_1_description_12":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"High-frequency capacitance-voltage (C-V) characteristics of a buried-channel, MOS capacitor have been analyzed. High-frequency capacitance of a buried-channel MOS capacitor that has a player at the surface of n substrate reaches a minimum value and then slightly increases to saturate in the inversion region. Poisson equation is solved numerically including hole redistribution effect by the gate-voltage change for the measurement signal. The result quantitatively explains the existence of capacitance minimum which is peculiar to a buried-channel MOS capacitor.","subitem_description_type":"Other"}]},"item_1_full_name_7":{"attribute_name":"著者名よみ","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"43586","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ミヤケ, マサヤス"}]}]},"item_1_full_name_8":{"attribute_name":"著者名(英)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"43587","nameIdentifierScheme":"WEKO"}],"names":[{"name":"MIYAKE, Masayasu","nameLang":"en"}]}]},"item_1_source_id_13":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00217655","subitem_source_identifier_type":"NCID"}]},"item_1_text_10":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Department of Electronic and Electrical Engineering, Faculty of Engineering, Fukuyama University"}]},"item_1_text_9":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"福山大学工学部電子・電気工学科"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2003-12-01"}],"displaytype":"detail","filename":"KJ00005781525.pdf","filesize":[{"value":"773.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://fukuyama-u.repo.nii.ac.jp/record/8129/files/KJ00005781525.pdf"},"version_id":"a8aa6e56-61a4-4463-b06e-f7bc5362e266"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"埋め込みチャネルMOSキャパシタ","subitem_subject_scheme":"Other"},{"subitem_subject":"C-V特性","subitem_subject_scheme":"Other"},{"subitem_subject":"ポアソン方程式","subitem_subject_scheme":"Other"},{"subitem_subject":"正孔再分布","subitem_subject_scheme":"Other"},{"subitem_subject":"buried-channel MOS capacitor","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"C-V characteristics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Poisson equation","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"hole redistribution","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"埋め浴みチャネルMOSキャパシタの高周波C-V特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"埋め浴みチャネルMOSキャパシタの高周波C-V特性"},{"subitem_title":"High-Frequency C-V Characteristics of a Buried-Channel MOS Capacitor","subitem_title_language":"en"}]},"item_type_id":"1","owner":"3","path":["711"],"pubdate":{"attribute_name":"公開日","attribute_value":"2003-12-01"},"publish_date":"2003-12-01","publish_status":"0","recid":"8129","relation_version_is_last":true,"title":["埋め浴みチャネルMOSキャパシタの高周波C-V特性"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-06-19T10:29:05.381611+00:00"}