@article{oai:fukuyama-u.repo.nii.ac.jp:00008257,
 author = {三宅, 雅保},
 journal = {福山大学工学部紀要},
 month = {Dec},
 note = {P(論文), Light illumination effects on semiconductor device characteristics are investigated by numerical simulation. Numerical solutions for Poisson equation, current equations and continuity equations are obtained using the finite difference method. Depth profiles of potentials, current densities and carrier concentrations are evaluated for Si pn junctions under illumination. Physical mechanisms in semiconductors can be understood referring to calculated results.},
 pages = {27--35},
 title = {半導体デバイス特性への光照射効果の数値計算},
 volume = {30},
 year = {2006}
}