{"created":"2023-06-19T09:51:10.032292+00:00","id":8209,"links":{},"metadata":{"_buckets":{"deposit":"cd86a599-13bb-43bf-9eb6-a6712f86a446"},"_deposit":{"created_by":3,"id":"8209","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"8209"},"status":"published"},"_oai":{"id":"oai:fukuyama-u.repo.nii.ac.jp:00008209","sets":["502:505:675:713"]},"author_link":["44101","44100","44099"],"item_1_biblio_info_14":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-12","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"23","bibliographicPageStart":"15","bibliographicVolumeNumber":"29","bibliographic_titles":[{"bibliographic_title":"福山大学工学部紀要"}]}]},"item_1_creator_6":{"attribute_name":"著者名(日)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"三宅, 雅保"}],"nameIdentifiers":[{"nameIdentifier":"44099","nameIdentifierScheme":"WEKO"}]}]},"item_1_description_1":{"attribute_name":"ページ属性","attribute_value_mlt":[{"subitem_description":"P(論文)","subitem_description_type":"Other"}]},"item_1_description_12":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"Capacitance-voltage (C-V) characteristics of buried-channel MOS capacitors have been studied by small-signal admittance calculation. A numerical method for small-signal ac solutions of equations describing device electrical characteristics is presented. Using the method, the peculiar high-frequency C-V characteristics for buried-channel MOS capacitors are explained. It is found that the capacitance depends on measurement frequency in the accumulation region for buried-channel devices when the counter-doped layer is deep or the impurity concentration of the counter-doped layer is high. Depth profiles of various ac variables, such as current densities and carrier concentrations, are also calculated.","subitem_description_type":"Other"}]},"item_1_full_name_7":{"attribute_name":"著者名よみ","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"44100","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ミヤケ, マサヤス"}]}]},"item_1_full_name_8":{"attribute_name":"著者名(英)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"44101","nameIdentifierScheme":"WEKO"}],"names":[{"name":"MIYAKE, Masayasu","nameLang":"en"}]}]},"item_1_source_id_13":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00217655","subitem_source_identifier_type":"NCID"}]},"item_1_text_10":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Department of Electronic and Electrical Engineering, Faculty of Engineering, Fukuyama University"}]},"item_1_text_9":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"福山大学工学部電子・電気工学科"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2005-12-01"}],"displaytype":"detail","filename":"KJ00005781624.pdf","filesize":[{"value":"682.2 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://fukuyama-u.repo.nii.ac.jp/record/8209/files/KJ00005781624.pdf"},"version_id":"1e76c11a-1026-440f-850a-0c603cda2c03"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"C-V特性","subitem_subject_scheme":"Other"},{"subitem_subject":"埋め込みチャネルMOS","subitem_subject_scheme":"Other"},{"subitem_subject":"小信号アドミッタンス","subitem_subject_scheme":"Other"},{"subitem_subject":"交流解","subitem_subject_scheme":"Other"},{"subitem_subject":"C-V characteristics","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"buried-channel MOS","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"small-signal admittance","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"ac solution","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"小信号アドミッタンス計算による埋め込みチャネルMOSキャパシタのC-V特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"小信号アドミッタンス計算による埋め込みチャネルMOSキャパシタのC-V特性"},{"subitem_title":"C-V Characteristics of Buried-Channel MOS Capacitors by Small-Signal Admittance Calculation","subitem_title_language":"en"}]},"item_type_id":"1","owner":"3","path":["713"],"pubdate":{"attribute_name":"公開日","attribute_value":"2005-12-01"},"publish_date":"2005-12-01","publish_status":"0","recid":"8209","relation_version_is_last":true,"title":["小信号アドミッタンス計算による埋め込みチャネルMOSキャパシタのC-V特性"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-06-19T10:27:39.543426+00:00"}