{"created":"2023-06-19T09:51:08.112156+00:00","id":8164,"links":{},"metadata":{"_buckets":{"deposit":"a3fa9b0b-216d-4d67-853b-a1fe1c883e99"},"_deposit":{"created_by":3,"id":"8164","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"8164"},"status":"published"},"_oai":{"id":"oai:fukuyama-u.repo.nii.ac.jp:00008164","sets":["502:505:675:712"]},"author_link":["43818","43817","43819"],"item_1_biblio_info_14":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2004-12","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"17","bibliographicPageStart":"9","bibliographicVolumeNumber":"28","bibliographic_titles":[{"bibliographic_title":"福山大学工学部紀要"}]}]},"item_1_creator_6":{"attribute_name":"著者名(日)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"三宅, 雅保"}],"nameIdentifiers":[{"nameIdentifier":"43817","nameIdentifierScheme":"WEKO"}]}]},"item_1_description_1":{"attribute_name":"ページ属性","attribute_value_mlt":[{"subitem_description":"P(論文)","subitem_description_type":"Other"}]},"item_1_description_12":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"Charge-pumping technique for the determination of interface state density in MOSFETs has been studied. Interface state density is directly determined from charge-pumping currents that arise from trapping and emission of carriers by interface states. Experimental results for dependences of charge-pumping currents on measurement conditions are presented. Charge-pumping currents for square pulses are larger than those for triangular pulses. This is due to the mechanism that the range of energy levels of interface states, which give rise to charge-pumping currents, depends on a rise time and a fall time of pulses. Considering the mechanism, interface state density and capture cross sections are accurately determined.","subitem_description_type":"Other"}]},"item_1_full_name_7":{"attribute_name":"著者名よみ","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"43818","nameIdentifierScheme":"WEKO"}],"names":[{"name":"ミヤケ, マサヤス"}]}]},"item_1_full_name_8":{"attribute_name":"著者名(英)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"43819","nameIdentifierScheme":"WEKO"}],"names":[{"name":"MIYAKE, Masayasu","nameLang":"en"}]}]},"item_1_source_id_13":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00217655","subitem_source_identifier_type":"NCID"}]},"item_1_text_10":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Department of Electronic and Electrical Engineering, Faculty of Engineering, Fukuyama University"}]},"item_1_text_9":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"福山大学工学部電子・電気工学科"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2004-12-01"}],"displaytype":"detail","filename":"KJ00005781560.pdf","filesize":[{"value":"787.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://fukuyama-u.repo.nii.ac.jp/record/8164/files/KJ00005781560.pdf"},"version_id":"8d3c20db-a13e-4957-a55e-090726d2efae"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"チャージポンピング法","subitem_subject_scheme":"Other"},{"subitem_subject":"界面準位","subitem_subject_scheme":"Other"},{"subitem_subject":"MOS","subitem_subject_scheme":"Other"},{"subitem_subject":"捕獲断面積","subitem_subject_scheme":"Other"},{"subitem_subject":"charge-pumping technique","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"interface state","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"MOS","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"capture cross section","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"チャージポンピング法によるMOS界面準位密度の測定","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"チャージポンピング法によるMOS界面準位密度の測定"},{"subitem_title":"Measurement of interface state density in MOSFETs by charge-pumping technique","subitem_title_language":"en"}]},"item_type_id":"1","owner":"3","path":["712"],"pubdate":{"attribute_name":"公開日","attribute_value":"2004-12-01"},"publish_date":"2004-12-01","publish_status":"0","recid":"8164","relation_version_is_last":true,"title":["チャージポンピング法によるMOS界面準位密度の測定"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-06-19T10:28:26.856264+00:00"}