@article{oai:fukuyama-u.repo.nii.ac.jp:00008164,
 author = {三宅, 雅保},
 journal = {福山大学工学部紀要},
 month = {Dec},
 note = {P(論文), Charge-pumping technique for the determination of interface state density in MOSFETs has been studied. Interface state density is directly determined from charge-pumping currents that arise from trapping and emission of carriers by interface states. Experimental results for dependences of charge-pumping currents on measurement conditions are presented. Charge-pumping currents for square pulses are larger than those for triangular pulses. This is due to the mechanism that the range of energy levels of interface states, which give rise to charge-pumping currents, depends on a rise time and a fall time of pulses. Considering the mechanism, interface state density and capture cross sections are accurately determined.},
 pages = {9--17},
 title = {チャージポンピング法によるMOS界面準位密度の測定},
 volume = {28},
 year = {2004}
}