{"created":"2023-06-19T09:50:57.242662+00:00","id":7910,"links":{},"metadata":{"_buckets":{"deposit":"9a4798dc-f310-444e-bbb1-5c93b28bce8e"},"_deposit":{"created_by":3,"id":"7910","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"7910"},"status":"published"},"_oai":{"id":"oai:fukuyama-u.repo.nii.ac.jp:00007910","sets":["502:505:675:692:694"]},"author_link":["42497","42498","42500","42499","42496","42501"],"item_1_biblio_info_14":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1994-03","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"2","bibliographicPageEnd":"37","bibliographicPageStart":"33","bibliographicVolumeNumber":"17","bibliographic_titles":[{"bibliographic_title":"福山大学工学部紀要"}]}]},"item_1_creator_6":{"attribute_name":"著者名(日)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"坂井, 英幸"}],"nameIdentifiers":[{"nameIdentifier":"42496","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"相島, 亜洲雄"}],"nameIdentifiers":[{"nameIdentifier":"42497","nameIdentifierScheme":"WEKO"}]}]},"item_1_description_1":{"attribute_name":"ページ属性","attribute_value_mlt":[{"subitem_description":"P(論文)","subitem_description_type":"Other"}]},"item_1_description_12":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"High field transport properties in InAlAs-InGaAs-InAlAs double hetero structures are clarified. First, wave functions in InGaAs layers are calculated self consistently. Then, various scattering rates such as acoustic phonon, polaroptical phonon, inter-valley phonon, impurity, alloy scatterings are calculated using electron wave functions. Real space ensemble Monte Carlo simulations are performed to clarify the velocity-field characteristics and diffusion constants. Such results are useful for designing the InGaAs HEMT.","subitem_description_type":"Other"}]},"item_1_full_name_7":{"attribute_name":"著者名よみ","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"42498","nameIdentifierScheme":"WEKO"}],"names":[{"name":"サカイ, ヒデユキ"}]},{"nameIdentifiers":[{"nameIdentifier":"42499","nameIdentifierScheme":"WEKO"}],"names":[{"name":"アイシマ, アスオ"}]}]},"item_1_full_name_8":{"attribute_name":"著者名(英)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"42500","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Sakai, Hideyuki","nameLang":"en"}]},{"nameIdentifiers":[{"nameIdentifier":"42501","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Aishima, Asuo","nameLang":"en"}]}]},"item_1_source_id_13":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00217655","subitem_source_identifier_type":"NCID"}]},"item_1_text_9":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"福山大学工学部"},{"subitem_text_value":"福山大学工学部"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"1994-03-01"}],"displaytype":"detail","filename":"KJ00005781278.pdf","filesize":[{"value":"262.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://fukuyama-u.repo.nii.ac.jp/record/7910/files/KJ00005781278.pdf"},"version_id":"071f3c90-2046-4b76-830f-c24aecb0a2e5"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"InGaAs","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Highfield","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"Transport","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"InAlAs/InGaAs/InAlAsの高電界輸送特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"InAlAs/InGaAs/InAlAsの高電界輸送特性"},{"subitem_title":"High Field Transport Properties in InAlAs/InGaAs/InAlAs","subitem_title_language":"en"}]},"item_type_id":"1","owner":"3","path":["694"],"pubdate":{"attribute_name":"公開日","attribute_value":"1994-03-01"},"publish_date":"1994-03-01","publish_status":"0","recid":"7910","relation_version_is_last":true,"title":["InAlAs/InGaAs/InAlAsの高電界輸送特性"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-06-19T10:34:04.152166+00:00"}