@article{oai:fukuyama-u.repo.nii.ac.jp:00007910,
 author = {坂井, 英幸 and 相島, 亜洲雄},
 issue = {2},
 journal = {福山大学工学部紀要},
 month = {Mar},
 note = {P(論文), High field transport properties in InAlAs-InGaAs-InAlAs double hetero structures are clarified. First, wave functions in InGaAs layers are calculated self consistently. Then, various scattering rates such as acoustic phonon, polaroptical phonon, inter-valley phonon, impurity, alloy scatterings are calculated using electron wave functions. Real space ensemble Monte Carlo simulations are performed to clarify the velocity-field characteristics and diffusion constants. Such results are useful for designing the InGaAs HEMT.},
 pages = {33--37},
 title = {InAlAs/InGaAs/InAlAsの高電界輸送特性},
 volume = {17},
 year = {1994}
}