{"created":"2023-06-19T09:50:54.132256+00:00","id":7861,"links":{},"metadata":{"_buckets":{"deposit":"ae152232-52f4-4e87-8efa-478769a82446"},"_deposit":{"created_by":3,"id":"7861","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"7861"},"status":"published"},"_oai":{"id":"oai:fukuyama-u.repo.nii.ac.jp:00007861","sets":["502:505:675:690"]},"author_link":["42294","42295","42296","42293","42292","42297"],"item_1_biblio_info_14":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1993","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"53","bibliographicPageStart":"45","bibliographicVolumeNumber":"15","bibliographic_titles":[{"bibliographic_title":"福山大学工学部紀要"}]}]},"item_1_creator_6":{"attribute_name":"著者名(日)","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"坂井, 英幸"}],"nameIdentifiers":[{"nameIdentifier":"42292","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"相島, 亜洲雄"}],"nameIdentifiers":[{"nameIdentifier":"42293","nameIdentifierScheme":"WEKO"}]}]},"item_1_description_1":{"attribute_name":"ページ属性","attribute_value_mlt":[{"subitem_description":"P(論文)","subitem_description_type":"Other"}]},"item_1_description_12":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"InGaAs is one of the most promising compound semiconductors for the application in the field of high speed signal processings. In order to carry out the efficient design of such InGaAs devices, it is nesesarry to know the velocity-field characteristics and diffusion constant in InGaAs. Ensemble monte carlo simulations are carried out to ascertain the velocity-field characteristics and magnitudes of the parallel and perpendicular diffusion constants in InGaAs.","subitem_description_type":"Other"}]},"item_1_full_name_7":{"attribute_name":"著者名よみ","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"42294","nameIdentifierScheme":"WEKO"}],"names":[{"name":"サカイ, ヒデユキ"}]},{"nameIdentifiers":[{"nameIdentifier":"42295","nameIdentifierScheme":"WEKO"}],"names":[{"name":"アイシマ, アスオ"}]}]},"item_1_full_name_8":{"attribute_name":"著者名(英)","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"42296","nameIdentifierScheme":"WEKO"}],"names":[{"name":"SHAKAI, Hideyuki","nameLang":"en"}]},{"nameIdentifiers":[{"nameIdentifier":"42297","nameIdentifierScheme":"WEKO"}],"names":[{"name":"AISHIMA, Ashuo","nameLang":"en"}]}]},"item_1_source_id_13":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00217655","subitem_source_identifier_type":"NCID"}]},"item_1_text_9":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_value":"福山大学工学部電子・電気工学科"},{"subitem_text_value":"福山大学工学部電子・電気工学科"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"1993-01-01"}],"displaytype":"detail","filename":"KJ00005781247.pdf","filesize":[{"value":"413.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://fukuyama-u.repo.nii.ac.jp/record/7861/files/KJ00005781247.pdf"},"version_id":"7fff5705-daa7-4e3d-b8cd-4b9c7e707505"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"InGaAsの高電界輸送特性の解析","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"InGaAsの高電界輸送特性の解析"},{"subitem_title":"An Analysis of High Field Transport Properties in InGaAs","subitem_title_language":"en"}]},"item_type_id":"1","owner":"3","path":["690"],"pubdate":{"attribute_name":"公開日","attribute_value":"1993-01-01"},"publish_date":"1993-01-01","publish_status":"0","recid":"7861","relation_version_is_last":true,"title":["InGaAsの高電界輸送特性の解析"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-06-19T10:35:09.319048+00:00"}