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High Field Transport Properties in AlGaAs-GaAs-AlGaAs Single Quantum Well Layer
https://fukuyama-u.repo.nii.ac.jp/records/7790
https://fukuyama-u.repo.nii.ac.jp/records/7790d3b736f2-b55a-4086-91e4-1d86f9113a2e
| 名前 / ファイル | ライセンス | アクション |
|---|---|---|
KJ00005781146.pdf (828.9 kB)
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| Item type | 紀要論文(ELS) / Departmental Bulletin Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 1990-01-01 | |||||
| タイトル | ||||||
| タイトル | High Field Transport Properties in AlGaAs-GaAs-AlGaAs Single Quantum Well Layer | |||||
| 言語 | en | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | departmental bulletin paper | |||||
| ページ属性 | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | P(論文) | |||||
| 論文名よみ | ||||||
| その他のタイトル | High Field Transport Properties in AlGaAs-GaAs-AlGaAs Single Quantum Well Layer | |||||
| 著者名(日) |
相島, 亜洲雄
× 相島, 亜洲雄 |
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| 著者名よみ | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 41985 | |||||
| 姓名 | アイシマ, アスオ | |||||
| 著者名(英) | ||||||
| 識別子Scheme | WEKO | |||||
| 識別子 | 41986 | |||||
| 姓名 | AISHIMA, Asuo | |||||
| 言語 | en | |||||
| 著者所属(英) | ||||||
| 言語 | en | |||||
| 値 | Department of Electronics and Electrical Engineering, Fukuyama University | |||||
| 抄録(英) | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The distribution function of electrons in momentum space, electron velocity, popuration ratio, etc., in AlGaAs-GaAs-AlGaAs single quantum well layers, have been calculated as a function of the applied voltage parallel to the interface. It has been found from the results that the electron drift mobility in higher mobility samples decreases rapidly with increasing the applied voltage because of the increase of the polar optical phonon emission rate. The electron velocity-field characteristics in two dimensional electron gas have been compared with those in usual bulk electrons. It has been shown that the electron velocity-field characteristics differ only slightly from those in bulk electrons. | |||||
| 雑誌書誌ID | ||||||
| 収録物識別子タイプ | NCID | |||||
| 収録物識別子 | AN00217655 | |||||
| 書誌情報 |
福山大学工学部紀要 巻 12, p. 35-51, 発行日 1990 |
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