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Time Response of Depletion Layer in Short n-GaAs Schottky Diode
https://fukuyama-u.repo.nii.ac.jp/records/7766
https://fukuyama-u.repo.nii.ac.jp/records/7766e57b2741-a9fe-4d44-81f1-f88bcb3fb9d6
名前 / ファイル | ライセンス | アクション |
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Item type | 紀要論文(ELS) / Departmental Bulletin Paper(1) | |||||
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公開日 | 1990-01-01 | |||||
タイトル | ||||||
タイトル | Time Response of Depletion Layer in Short n-GaAs Schottky Diode | |||||
言語 | en | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | departmental bulletin paper | |||||
ページ属性 | ||||||
内容記述タイプ | Other | |||||
内容記述 | P(論文) | |||||
論文名よみ | ||||||
その他のタイトル | Time Response of Depletion Layer in Short n-GaAs Schottky Diode | |||||
著者名(日) |
相島, 亜洲雄
× 相島, 亜洲雄 |
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著者名よみ | ||||||
識別子Scheme | WEKO | |||||
識別子 | 41901 | |||||
姓名 | アイシマ, アスオ | |||||
著者名(英) | ||||||
識別子Scheme | WEKO | |||||
識別子 | 41902 | |||||
姓名 | AISHIMA, Asuo | |||||
言語 | en | |||||
著者所属(英) | ||||||
言語 | en | |||||
値 | Department of Electronics and Electrical Engineering, Fukuyama University | |||||
抄録(英) | ||||||
内容記述タイプ | Other | |||||
内容記述 | Time response of the depletion layer in an n-GaAs submicron Schottky diode for step voltage and small ac voltage was investigated by using a simplified diode model. It was found that the electron velocity overshoot effect alone worsen the switching speed of the Schottky diode but both the electron velocity overshoot effect and the dependence of the momentum and energy relaxation times on electron energy improve the swiching behavior of the diode. It was also demonstrated that the inductive current flows in the depletion layer of the diode for some frequency range. In order to correctly estimate the cutoff frequency of the n-GaAs submicron devices, not only the velocity overshoot effect but also the transient time response of the depletion layer in the devices for step terminal voltage must be taken into account in the analysis. | |||||
雑誌書誌ID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00217655 | |||||
書誌情報 |
福山大学工学部紀要 巻 12, p. 23-33, 発行日 1990 |