2026-03-08T18:08:08Z https://fukuyama-u.repo.nii.ac.jp/oai

oai:fukuyama-u.repo.nii.ac.jp:00008043 2023-06-19T10:30:58Z 502:505:675:707

電子波の干渉効果を用いたスウィッチングデバイスの提案 A Proposal of Switching Devices Utilizing Interference effects of Electron Waves 相島, 亜洲雄 43106 超格子 ガリウム砒素 スウィッチ 量子効果 干渉 Superlattice GaAs Switch Quantum effect Interference P(論文) A new switching device utilizing the quantum interference effects is proposed. AlGaAs-GaAs superlattice exhibits strong quantum interference effects due to quantum mechanical reflection at respective conduction band potential step. In AlGaAs-GaAs layered structures, the pass band, the stop band ,and the pass band appears with increasing electron energy. Electron energy can be modulated by the gate voltage. Therefore, the transmission coefficient of electrons wave is changed by the gate voltage. Thus, electronwaves transmit for some range of the gate voltage and reflected for the other gate voltage. This nature can be applied for realizing a new switching device. departmental bulletin paper 1999-10 application/pdf 福山大学工学部紀要 23 9 14 AN00217655 https://fukuyama-u.repo.nii.ac.jp/record/8043/files/KJ00005781423.pdf https://fukuyama-u.repo.nii.ac.jp/records/8043 jpn